A 64 kb differential single-port 12T SRAM design with a bit-interleaving scheme for low-voltage operation in 32 nm SOI CMOS

TitleA 64 kb differential single-port 12T SRAM design with a bit-interleaving scheme for low-voltage operation in 32 nm SOI CMOS
Publication TypeConference Paper
Year of Publication2016
AuthorsAtaei S, Stine JE, Guthaus MR
Conference NameComputer Design (ICCD), 2016 IEEE 34th International Conference on
PublisherIEEE